Insulated Gate Bipolar Transistor IGBT G25t120d to-247
- Product Code: G25T120D
- Availability: 2-3 Days
- FOB Price: Negotiable | Get Latest Price
Jiangsu Donghai Semiconductor Co.,Ltd.
- Location: Jiangsu, China
- Business Type: Manufacturer
- Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC
For product pricing, customization, or other inquiries:
Insulated Gate Bipolar Transistor IGBT G25t120d to-247
| PARAMETER | SYMBOL | RATING | UNIT | ||
| Collector-Emitter Voltage | VCES | 1200 | V | ||
| Gate- Emitter Voltage | VGES | ±20 | V | ||
| Collector Current | IC(T=25ºC) | 50 | A | ||
| Collector Current | (Tc=100ºC) | 25 | A | ||
| Pulsed Collector Current | ICM | 75 | A | ||
| Diode Continuous Forward Current | IF @TC = 100 °C | 25 | A | ||
| Diode Maximum Forward Current | IFM | 75 | A | ||
| Total Dissipation | TC=25ºC | PD | 278 | W | |
| TC=100ºC | PD | 111 | W | ||
| Junction Temperature | Tj | 150 | ºC | ||
| storage Temperature | Tstg | -55~150 | ºC | ||
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 2.0V @ IC =25A and TC = 100°C |
| Extremely enhanced avalanche capability |
| Applications |
| Aircondition |
| Welding |
| UPS |
| Product Specifications and Packaging Models | |||||
| Product Model | Package Type | Mark Name | RoHS | Package | Quantity |
| G25T120D | TO-247 | G25T120D | Pb-free | Tube | 300/box |
Tags: G25T120D
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