IGBT Module Dga75h170m2t
- Product Code: DGA75H170M2T
- Availability: In Stock
- FOB Price: Negotiable | Get Latest Price
Jiangsu Donghai Semiconductor Co.,Ltd.
- Location: Jiangsu, China
- Business Type: Manufacturer
- Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC
For product pricing, customization, or other inquiries:
IGBT Module Dga75h170m2t
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
Features |
FS Trench Technology, Positive temperature coefficient |
Low saturation voltage: VCE(sat), typ = 2.25V @ IC =75A and Tj = 25°C |
Extremely enhanced avalanche capability |
Applications |
Welding |
UPS |
Three-leve Inverter |
AC to DC Converters |
AC and DC servo drive amplifier |
Type | VCE | IC | VCEsat,Tj=25ºC | Tjop | Package |
DGC75C170M2T | 1700V | 75A (Tj=100ºC) | 2.25V (Typ) | 175ºC | 34MM |
Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)
PARAMETER | SYMBOL | VALUE | UNIT | |||
Collector-to-Emitter Voltage | VCE | 1700 | V | |||
Gate-to-Emitter Voltage | VGE | ±20 | V | |||
DC Collector current | Ic Tj=25ºC | 150 | A | |||
Tj=100ºC | 75 | A | ||||
Pulsed Collector Current #1 | ICM | 300 | A |
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
PARAMETER | SYMBOL | VALUE | UNIT | |||
Peak Repetitive Reverse Voltage | VRRM | 1700 | V | |||
DC Blocking Voltage | VR | 1700 | V | |||
Average Rectified Forward Current | IF(AV) | 75 | A | |||
Repetitive Peak Surge Current | IFRM | 150 | A | |||
Nonrepetitive Peak Surge Current(single) /tp=1.0ms | IFSM | 300 | A |
5.53IGBT Module
PARAMETER | SYMBOL | VALUE | UNIT | |||
Junction Temperature Range | Tjmax | -45~175 | ºC | |||
Operating Junction Temperature | Tjop | -45~150 | ºC | |||
Storage Temperature Range | Tstg | -45~150 | ºC | |||
Isolation Voltage RMS,f=50Hz,t=1min | VISO | 4000 | A |
5.4Thermal Characteristics(IGBT Module)
PARAMETER | SYMBOL | VALUE | UNIT | ||||||
Thermal Resistance Junction to Case | IGBT RthJC | 0.22 | ºC/W | ||||||
Diode RthJC | 0.42 | ºC/W |
Tags: DGA75H170M2T
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