IGBT Module Dga75h170m2t
- Product Code: DGA75H170M2T
- Availability: 2-3 Days
- FOB Price: Negotiable | Get Latest Price
Jiangsu Donghai Semiconductor Co.,Ltd.
- Location: Jiangsu, China
- Business Type: Manufacturer
- Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC
For product pricing, customization, or other inquiries:
IGBT Module Dga75h170m2t
These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.
| Features |
| FS Trench Technology, Positive temperature coefficient |
| Low saturation voltage: VCE(sat), typ = 2.25V @ IC =75A and Tj = 25°C |
| Extremely enhanced avalanche capability |
| Applications |
| Welding |
| UPS |
| Three-leve Inverter |
| AC to DC Converters |
| AC and DC servo drive amplifier |
| Type | VCE | IC | VCEsat,Tj=25ºC | Tjop | Package |
| DGC75C170M2T | 1700V | 75A (Tj=100ºC) | 2.25V (Typ) | 175ºC | 34MM |
Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Collector-to-Emitter Voltage | VCE | 1700 | V | |||
| Gate-to-Emitter Voltage | VGE | ±20 | V | |||
| DC Collector current | Ic Tj=25ºC | 150 | A | |||
| Tj=100ºC | 75 | A | ||||
| Pulsed Collector Current #1 | ICM | 300 | A | |||
5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Peak Repetitive Reverse Voltage | VRRM | 1700 | V | |||
| DC Blocking Voltage | VR | 1700 | V | |||
| Average Rectified Forward Current | IF(AV) | 75 | A | |||
| Repetitive Peak Surge Current | IFRM | 150 | A | |||
| Nonrepetitive Peak Surge Current(single) /tp=1.0ms | IFSM | 300 | A | |||
5.53IGBT Module
| PARAMETER | SYMBOL | VALUE | UNIT | |||
| Junction Temperature Range | Tjmax | -45~175 | ºC | |||
| Operating Junction Temperature | Tjop | -45~150 | ºC | |||
| Storage Temperature Range | Tstg | -45~150 | ºC | |||
| Isolation Voltage RMS,f=50Hz,t=1min | VISO | 4000 | A | |||
5.4Thermal Characteristics(IGBT Module)
| PARAMETER | SYMBOL | VALUE | UNIT | ||||||
| Thermal Resistance Junction to Case | IGBT RthJC | 0.22 | ºC/W | ||||||
| Diode RthJC | 0.42 | ºC/W | |||||||
Tags: DGA75H170M2T
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