IGBT Module Dga75h170m2t

Product Code: DGA75H170M2T
Availability: 2-3 Days

FOB Price: Negotiable | Get Latest Price

Company Profile

Jiangsu Donghai Semiconductor Co.,Ltd.

Location: Jiangsu, China
Business Type: Manufacturer
Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC

For product pricing, customization, or other inquiries:

Description

IGBT Module Dga75h170m2t

These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.

Features

FS Trench Technology, Positive temperature
coefficient

Low saturation voltage: VCE(sat), typ = 2.25V
@ IC =75A and Tj = 25°C

Extremely enhanced avalanche capability

Applications

Welding

UPS

Three-leve Inverter

AC to DC Converters

AC and DC servo drive amplifier

Type	VCE	IC	VCEsat,Tj=25ºC	Tjop	Package
DGC75C170M2T	1700V	75A (Tj=100ºC)	2.25V (Typ)	175ºC	34MM

Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)

PARAMETER	SYMBOL	VALUE	UNIT

Collector-to-Emitter Voltage	V_CE	1700	V
Gate-to-Emitter Voltage	V_GE	±20	V
DC Collector current	IcTj=25ºC	150	A
	Tj=100ºC	75	A
Pulsed Collector Current #1	I_CM	300	A

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)

PARAMETER	SYMBOL	VALUE	UNIT

Peak Repetitive Reverse Voltage	VRRM	1700	V
DC Blocking Voltage	V_R	1700	V
Average Rectified Forward Current	IF(AV)	75	A
Repetitive Peak Surge Current	IFRM	150	A
Nonrepetitive Peak Surge Current(single) /tp=1.0ms	IFSM	300	A

5.53IGBT Module

PARAMETER	SYMBOL	VALUE	UNIT

Junction Temperature Range	Tjmax	-45~175	ºC
Operating Junction Temperature	Tjop	-45~150	ºC
Storage Temperature Range	Tstg	-45~150	ºC
Isolation Voltage RMS,f=50Hz,t=1min	VISO	4000	A