100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

Product Code: 30H10K
Availability: 2-3 Days

FOB Price: Negotiable | Get Latest Price

Company Profile

Jiangsu Donghai Semiconductor Co.,Ltd.

Location: Jiangsu, China
Business Type: Manufacturer
Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC

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Description

100A 30V N-Channel Enhancement Mode Power Mosfet 30h10K to-252b

100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used
advanced trench technology design, provided excellent
RDSON and low gate charge. Which accords with the
RoHS standard.

Features

Fast Switching

Low ON Resistance(Rdson≤0.55mΩ)

Low Gate Charge(Typ: 43nC)

Low Reverse Transfer Capacitances(Typ: 215pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Power switching applications

Inverter management system

Electric Tools

Automotive Electronics

PARAMETER		SYMBOL	VALUE		UNIT
			30H10/30H10I/30H10E/30H10K/30H10B	30H10F
Maximum Drian-Source DC Voltage		V_DS	30		V
Maximum Gate-Drain Voltage		V_GS	±20		V
Drain Current(continuous)		I_D(T=25ºC)	100		A
		(T=100ºC)	70		A
Drain Current(Pulsed)		I_DM	280		A
Single Pulse Avalanche Energy		E_AS	200		mJ
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	60	24	W
Junction Temperature		T_j	-55~150		ºC
storage Temperature		T_stg	-55~150		ºC

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
30H10	TO-220C	30H10	Pb-free	Tube	1000/box
30H10F	TO-220F	30H10F	Pb-free	Tube	1000/box
30H10B	TO-251	30H10B	Pb-free	Tube	3000/box
30H10K	TO-252	30H10K	Pb-free	Tape & Reel	2500/box
30H10I	TO-262	30H10I	Pb-free	Tube	1000/box
30H10E	TO-263	30H10E	Pb-free	Tape & Reel	800/box