Insulated Gate Bipolar Transistor IGBT G25t120d to-247

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

  • Product Code: G25T120D
  • Availability: In Stock

This product has a minimum quantity of 1800
Company Profile

Jiangsu Donghai Semiconductor Co.,Ltd.

  • Location: Jiangsu, China
  • Business Type: Manufacturer
  • Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC

For product pricing, customization, or other inquiries:

Insulated Gate Bipolar Transistor IGBT G25t120d to-247

PARAMETER SYMBOL RATING UNIT
 
Collector-Emitter Voltage VCES 1200 V
Gate- Emitter Voltage VGES ±20 V
Collector Current IC(T=25ºC) 50 A
Collector Current  (Tc=100ºC) 25 A
Pulsed Collector Current ICM 75 A
Diode Continuous Forward Current I@TC = 100 °C 25 A
Diode Maximum Forward Current IFM 75 A
Total Dissipation TC=25ºC PD 278 W
TC=100ºC PD 111 W
Junction Temperature Tj 150 ºC
storage Temperature Tstg -55~150 ºC

 

Features
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V
@ I=25A and T= 100°C
Extremely enhanced avalanche capability
Applications
Aircondition
Welding
UPS

 

Product Specifications and Packaging Models
Product Model Package Type Mark Name RoHS Package Quantity
G25T120D TO-247 G25T120D Pb-free Tube 300/box

Tags: G25T120D

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