IGBT Module Dga75h170m2t

IGBT Module Dga75h170m2t

  • Product Code: DGA75H170M2T
  • Availability: In Stock

This product has a minimum quantity of 5000
Company Profile

Jiangsu Donghai Semiconductor Co.,Ltd.

  • Location: Jiangsu, China
  • Business Type: Manufacturer
  • Main Products: Mosfets, Diodes, IGBT, Transistor, Thyristor, IC

For product pricing, customization, or other inquiries:

IGBT Module Dga75h170m2t

These Insulated Gate Bipolar Transistor used advanced trench and
Fieldstop technology design, provided excellent VCEsat and switching
speed ,low gate charge. Which accords with the RoHS standard.

Features
FS Trench Technology, Positive temperature
coefficient
Low saturation voltage: VCE(sat), typ = 2.25V
@ IC =75A and Tj = 25°C
Extremely enhanced avalanche capability
Applications
Welding
UPS
Three-leve Inverter
AC to DC Converters
AC and DC servo drive amplifier

 

Type VCE IC VCEsat,Tj=25ºC Tjop Package
DGC75C170M2T 1700V 75A (Tj=100ºC) 2.25V (Typ) 175ºC 34MM

Electrical Characteristics
5.1Absolute Maximum Ratings (IGBT) (Tc=25ºC,unless otherwise specified)

PARAMETER SYMBOL VALUE UNIT
     
Collector-to-Emitter Voltage VCE 1700 V
Gate-to-Emitter Voltage VGE ±20 V
DC Collector current Ic Tj=25ºC 150 A
Tj=100ºC 75 A
Pulsed Collector Current #1 ICM 300 A

 

5.2 Absolute Maximum Ratings (Diode) (Tc=25ºC,unless otherwise specified)

PARAMETER SYMBOL VALUE UNIT
     
Peak Repetitive Reverse Voltage VRRM 1700 V
DC Blocking Voltage VR 1700 V
Average Rectified Forward Current IF(AV) 75 A
Repetitive Peak Surge Current IFRM 150 A
Nonrepetitive Peak Surge Current(single) /tp=1.0ms IFSM 300 A


5.53IGBT Module

PARAMETER SYMBOL VALUE UNIT
     
Junction Temperature Range Tjmax -45~175 ºC
Operating Junction Temperature Tjop -45~150 ºC
Storage Temperature Range Tstg -45~150 ºC
Isolation Voltage RMS,f=50Hz,t=1min VISO 4000 A


5.4Thermal Characteristics(IGBT Module)

PARAMETER SYMBOL VALUE UNIT
 
Thermal Resistance Junction to Case IGBT RthJC 0.22 ºC/W
Diode RthJC 0.42 ºC/W

Tags: DGA75H170M2T

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